On the electron impact ionization of silicon and metal containing organic molecules

• Calculation of inelastic cross sections for e-silicon/metal containing organic molecules.
• Quantum mechanical approximation to find inelastic cross section from 10 to 2000 eV.
• Semi-empirical formalism to extract ionization fraction from inelastic cross section.
• The methods adopted found to give reasonable data with good comparison.
• Present calculation gives better accord with measurements than other theories.

Calculation of electron impact total inelastic cross sections for three silicon containing organic molecules (Trimethylsilane, Tetraethoxysilane and Hexamethyldisiloxane) and three organometallic complexes (Cyclopentadienyltrimethyl-platinium, Bismethylcyclopentadienyl-ferrum and Bismethylcyclopentadienyl-ruthenium) were performed employing spherical complex optical potential formalism. The complex scattering potential ionization contribution method was then used to derive total ionization cross sections from inelastic cross sections for these targets. The results presented here are for the incident electron energy ranging from ionization threshold to 2000 eV. The comparison with existing measurement shows promising results.

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