کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1194227 | 1492288 | 2012 | 12 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas Ion contributions to gas–surface interactions in inductively-coupled fluorocarbon plasmas](/preview/png/1194227.png)
The role of plasma-generated ions for plasma processing of substrates was investigated to develop a deeper understanding of the phenomena which occur at plasma–surface interfaces. Energy analyses were performed for nascent ions for a range of fluorocarbon (FC) plasma source gases, including CF4, C2F6, C3F8, C3F6, and hexafluoropropylene oxide (HFPO). Mean ion energies (
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► Nascent ions in fluorocarbon (FC) plasmas were identified and energy analyzed.
► Ion effects are mediated both by plasma parameters and the choice of precursor.
► Highly energetic ions induce CFx scatter at surfaces.
► Low energy plasma ions recombine in the gas phase to promote FC film growth.
► FC deposition rates are strongly influenced by gas-phase oligomer concentration.
Journal: International Journal of Mass Spectrometry - Volumes 330–332, 15 December 2012, Pages 46–57