کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
12006925 1039577 2018 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The first principle study of the electronic structure of SixGe(1−x) alloy films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
The first principle study of the electronic structure of SixGe(1−x) alloy films
چکیده انگلیسی
First principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA) are carried out to investigate the electronic band structures of SixGe(1−x) alloys nanofilms. The calculation results show that the band gaps of (100), (110) and (111) surfaces SixGe(1−x) alloy films with different thickness first increase with the increase of Si content, then flatten out, and finally decrease. At the same time, the transformation of direct band gap and indirect band gap occurs when the thickness of films and Si content of the three surface SixGe(1−x) alloy films changes to a certain critical condition. It will be a good way to obtain direct-gap band emission in SixGe(1−x) alloys materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 382, Issue 47, 30 November 2018, Pages 3418-3422
نویسندگان
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