کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1251437 | 1496067 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence Properties of Two-dimensional Planar Layer and Three-dimensional Island Layer for ZnO Films Grown Using MOCVD1
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO (002) films with different thicknesses ranging from 7 to 300 nm were grown on sapphire (006) substrates via metal-organic chemical vapor deposition (MOCVD). The two-dimensional (2D) planar layer and the three-dimensional(3D) island layer were studied by using of X-ray diffraction(XRD) rocking curves and atomic force microscopy (AFM). The room temperature photoluminescence(PL) spectra show a blue shift of the peak positions of the ultraviolet(UV) emission with increasing film thickness. The blue shift is remarkably high(393-380 nm) when an increase in film thickness(7-15 nm) is accompanied by the change of structure from a 2D planar layer to a 3D island layer. The PL spectra at 77 K also indicate that there are different transition mechanisms in the film thickness from a 2D planar layer to a 3D island layer near the 2D layer region.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Research in Chinese Universities - Volume 22, Issue 6, November 2006, Pages 692-695
Journal: Chemical Research in Chinese Universities - Volume 22, Issue 6, November 2006, Pages 692-695
نویسندگان
HUANG Ke-ke, HOU Chang-min, GAO Zhong-min, LI Xiang-shan, FENG Shou-hua, ZHANG Yuan-tao, ZHU Hui-chao, DU Guo-tong,