کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1260275 | 971732 | 2007 | 4 صفحه PDF | دانلود رایگان |
The electrical, structure and optical properties of Si-doped Al0.5Ga0.5N epilayers with a thickness of about 0.5 μ grown on sapphire substrates using an AIN buffer by metalorganic chemical vapor deposition were reported. Hall-effect measurements showed that n-type Al0.5Ga0.5N was achieved achieved with an electron concentration of 1.2 × 1019 cm−3 and mobility of 12 cm2·Vs−1 at room temperature. The electron concentration increases with an increase of Si doping level. Lattice constant of c and Raman shift of Si-doped Al0.5Ga0.5N epilayers with various SiH4 flow rates was studied by X-ray diffraction (XRD) and Raman scattering spectrum. With increasing SiH4 flow rate, the decrease of the lattice constant of c and the frequency of E2 phonon implies gradual relaxation of the stress in the epilayers.
Journal: Journal of Rare Earths - Volume 25, Supplement 2, June 2007, Pages 349-352