کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1262378 | 971861 | 2012 | 4 صفحه PDF | دانلود رایگان |
Amorphous La2Hf2O7 thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method under different conditions. The interfacial states of the La2Hf2O7/Si films were studied by synchrotron X-ray reflectivity (XRR) and X-ray photoelectron spectroscopy (XPS). When grown under vacuum condition, silicate, silicide and few SiOx were formed in the interface layer. However, the Hf-silicide formation could be effectively eliminated by the ambient oxygen pressure during film growth. The result revealed that the La2Hf2O7/Si interlayer was intimately related with growth condition. Insufficient supply of oxygen would cause Hf-silicide formation at the interface and it could be most effectively controlled by the ambient oxygen pressure during film growth.
Journal: Journal of Rare Earths - Volume 30, Issue 2, February 2012, Pages 189-192