کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1301572 1498937 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
The synthesis, characterization and DFT calculations of highly volatile aminogermylene precursors and thin film investigation for CVD/ALD technology
چکیده انگلیسی


• Aminogermylenes
• Good volatilization
• Aminogermylenes were investigated by TG experiments.
• Ge thin film was determined and characterized.

Compared to the difficult volatilization for germanium (IV) precursors, germanium (II) precursors usually have better volatilization but difficult to synthesize. A series of diamine germanium (II) precursors were synthesized, characterized and investigated by DFT calculations. These germanium (II) precursors were tested by TG experiments and showed excellent volatilization, which were suitable as a potential membrane material. Moreover, the Ge film was deposited on Si wafer directly and characterized by SEM.

The diamine germanium (II) precursors were synthesized, characterized and investigated by DFT calculations. These germanium (II) precursors were tested by TG experiments and showed excellent volatilization, which were suitable as a potential membrane material. Moreover, the Ge film was deposited on Si wafer directly and characterized by SEM.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Inorganic Chemistry Communications - Volume 53, March 2015, Pages 26–30
نویسندگان
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