کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
13449046 | 1843846 | 2020 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
InGaN based tunable green light-emitting diodes using InAlN interlayer and strain compensated AlGaN interlayer for better device performance
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of employing an InyAl1âyN and AlyGa1âyN interlayer (IL) in the InxGa1âxN/GaN active region for the green light-emitting diodes (LEDs) has been studied. The high compressive strain in InxGa1âxN/GaN QW is compensated by the tensile strained AlyGa1âyN IL. The InyAl1âyN IL reduces the strain between InxGa1âxN and GaN layers. The AlyGa1âyN or the InyAl1âyN layer in between the QW and the GaN barriers increase the barrier height, which potentially suppresses the electron and hole leakage from the QW. These increase the square of the overlap of electron and hole wave functions (Meh2) of the QW LEDs. By changing the well width and aluminum or indium content in the IL, we obtained better optical properties. It has found that 10 Ǻ thick In0.2Al0.8N and 10 Ǻ thick Al0.8Ga0.2N layers give the maximum Meh2 for the green LEDs, using InyAl1âyN and AlyGa1âyN ILs. Furthermore, we have compared the Meh2, using AlyGa1âyN and InyAl1âyN IL with the current. The best result is obtained for the 10 Ǻ Al0.8Ga0.2N IL, which increases the Meh2up to 2 times, as compared to the QW LEDs, without any IL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 124, April 2020, 105975
Journal: Optics & Laser Technology - Volume 124, April 2020, 105975
نویسندگان
Apu Mistry,