Evaluation of processing parameters effects on the formation of Si3N4 wires synthesized by means of ball milling and nitridation route

• Si3N4 wires were prepared by ball milling and nitridation route.
• The milled silicon powder and 1300 °C is proposed as an optimum value for the preparation of Si3N4 wires.
• With an increase in the reaction temperature, the Si3N4 have transformation of α-Si3N4 to β-Si3N4.
• With an increase in the reaction temperature, morphology of the Si3N4 change from particles to wires.

Crystalline silicon nitride (Si3N4) wires have been synthesized by means of ball milling and nitridation route. The influence of temperature of reaction and starting condition of the powder (milled or unmilled) on the synthesis of Si3N4 wires were studied. The reduced size of silicon particle during the milling process led to an increased degree of nitridation.Silicon powders with higher surface energy can react incessantly with nitrogen to form silicon nitride wires. The results show that the Si3N4 was fully formed with two kinds morphologies including globular and wire with a width of 100–300 nm and a length of several microns at temperature of 1300 °C for 1 h by employing the milled silicon powder. The infrared adsorption of wires exhibit absorption bands related to the absorption peaks of Si–N band of Si3N4.

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