Industrail Technology of Passivated Emitter and Rear Cells with Silicon Oxynitride and Silicon Nitride as Rear Passivation for High Efficiency BIPV Modules

Solar cells using the passivated emitter and rear contact (PERC) structure have become very popular for high eifficiency BIPV modules in the past decade. In this paper, we discuss a method to increase the efficiency of p-type monocrystalline silicon solar cells with equipments suitable for mass production. Using this method,SiOxNy /SiNx film stacks manufactured via PECVD are selected as rear passivation layer. Compared to conventional ALBSF cells, more than 0.6% efficiency gain was obtained. The rear contact pattern is also studied to increase the efficiency further. Most of the standard tools to produce conventional ALBSF solar cells can be utilized in this technology, which provides a cost efficient solution to mass-produce high efficiency BIPV modules.