Influence of Implantation Damage on Emitter Recombination

In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation current, J0, as a function of implant fluence. Recombination through defects is identified as the cause of increased J0 compared with simulated values.For P-implanted samples J0n+ is shown to depend on annealing temperature for samples partially amorphised by a 1×1015 cm-2 P implantation at 40 keV. J0n+ of samples completely amorphised by a 3×1015 cm-2 phosphorus implant show much reduced dependence on annealing temperature. For boron implanted samples annealed at 1000 °C, J0p+ was found to be below 25 fA.cm-2 for implant fluence less than 5×1014 cm-2 but to increase significantly for high fluence, where defects such as boron-interstitial clusters and dislocation loops are likely to dominate the observed recombination.