The Monte Carlo Simulation Coupled with Poisson Equation Applied to the Study of a Diode base of Hg0.8Cd0.2Te

We propose in the present work a numerical solution employed to treat the coupled Monte Carlo method and Poisson equations. This technique is capable of capturing some important features of semiconductor devices.Numerical results are presented for one-dimensional Hg0.8Cd0.2Te n nn structure, the presence of velocity overshoot has been observed and it is recognized that the fluctuation of velocity and energy term plays an important role in the simulation of semiconductor devices.