Effect of Substrate Temperature on Growth Bi1.6Pb0.4Sr2Ca2Cu2.4 Zn0.6O10 Thin Films Prepared by Pulsed Laser Deposition

Bi1.6Pb0.4Sr2Ca2Cu2.4Zn0.6O10 superconducting pellet was prepared by solid state reaction. The epitaxial growth of Bi1.6Pb0.4Sr2Ca2Cu2.4Zn0.6O10 films has been realized on Si (111) by pulse laser deposition (PLD) using Nd: YAG laser with 532 nm, pulse duration of about 7 nsec and a current density (0.4 – 8) J/cm2, at different substrate temperature 300, 320, 350 and 400 °C. All samples annealed at 820 °C in vacuum furnace employing oxygen atmosphere with flow rate 2 lit/min and heating rate 15 °C/min. The structure and morphology of the prepared samples was obtained by using x-ray diffractometer (XRD) and atomic force microscopy (AFM). The lattice constants of thin films samples were calculated using inter planer distance and Miller indices of the strong peaks in the XRD patterns. It has been observed that the enhancement of the transition temperature (Tc) for obtained films increase with increase of substrate temperature (Ts). The increase in Tc with the enhancement of substrate temperature could be explained to increasing the mobility of clusters and subsequently enhance the critical temperature.