Inkjet Patterned Anodic Aluminum Oxide for Rear Metal Contacts of Silicon Solar Cells

Local rear metal contacting through passivating dielectric layers has the ability to increase silicon solar cell efficiencies to over 20%. To-date most contact schemes have involved the formation of localised aluminium-alloyed regions through patterned AlOx or SiNx passivating layers. Recently electrochemically-formed anodic aluminium oxide (AAO) layers have been shown to enhance minority carrier lifetimes of phosphorus–diffused p-type CZ wafers when formed over an intervening layer of SiO2 or SiNx, suggesting that these layers may find applications as passivation layers for cells. We report here on the inkjet patterning of AAO layers formed over a thermally-grown thin oxide layer on p-type silicon surfaces. The process, which involves the inkjet printing of 50% (w/w) phosphoric acid, was used to form well-resolved arrays of holes with a diameter as small as 20-40 μm in the dielectric stack. Alloying of aluminium, which was evaporated over the patterned dielectric stack, resulted in the formation of localised back surface field (BSF) regions having a thickness up to 8 μm. Future work will focus on adapting this process for use in local rear metal contacting of silicon solar cells.