Preparation and Characterization of GaP Semiconductor Electrodes for Photoelectrochemical Water Splitting

p-type GaP was systematically examined for photoelectrochemical water splitting. The influence of wet chemical etching and the difference of electrochemical deposition and physical vapor deposition of platinum were investigated. Therefore, each preparation step of GaP was studied by photoelectron emission spectroscopy, atomic force microscopy and photoelectrochemical methods.