کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1513140 1511208 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The Influence of Oxygen Precipitates on the Diffusion Velocity of Copper in the Bottom Parts of mc-Si Ingots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
The Influence of Oxygen Precipitates on the Diffusion Velocity of Copper in the Bottom Parts of mc-Si Ingots
چکیده انگلیسی

In the present study, the influence of oxygen precipitates in the bottom part of multicrystalline silicon ingots on the metal diffusion has been studied. According to the well known haze test, an experimental setup for the measurement of diffusion velocity at 700 °C was developed, in which the copper was detected using Total Reflection X-ray Fluorescence.Differences in the diffusion velocity and the gettering amount for copper in samples with low-oxygen and high-oxygen were observed. Thus gettering efficiency seems to be dependent on oxygen content. Metal precipitates detected were found to contain Si, O and Cu. Since these precipitates appear along grain boundaries, it is assumed that grain boundaries act as a diffusion channel. As a consequence, oxygen precipitates located at the grain boundary should be most effective for intrinsic gettering. The results of these studies are encouraging since they imply that an optimized oxygen precipitate concentration in the bottom zone of a multicrystalline silicon ingot can be used as an effective intrinsic diffusion barrier.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 27, 2012, Pages 59-65