کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1513407 | 1511216 | 2012 | 13 صفحه PDF | دانلود رایگان |

In this work, we prove that photovoltaic solar cell can be represented by electrical circuit in the imaginary resistance and this happens by finding this circuit. After that we study the solar cell in the static state (i.e the volt–amper characteristic in the light and the volt-amper characteristic like a diod in the dark in laboratory temperature degree and in many other temperature degrees, by these curves we can find the potential hill ψ(ev)), then we study the solar cell in the dynamic state by phase gain analyzer (enter field of frequency [1Hz-20×103Hz] in the solar cell and calculate the imaginary resistance by using the gain values from the analyzer,then draw X(ω)=f(R(ω))and from this studying we can find the relaxation time τp sec, amplitude of storing capacitator CP F,leak resistance RPOhm, bulk resistance to cell RPOhm, coefficient of unhomogeneity (goodness coefficient),β, activation energy E(ev), charge carrier density Nd cm-3, electronic hunt density (surface states density) Nd cm-3, energy level ev.
Journal: Energy Procedia - Volume 19, 2012, Pages 199-211