Contribution to a Comparison of Laser Diodes Based Quaternary Alloys for Different Wavelength:GaxIn1-xAsySb1-y

The fact that laser diodes are by nature a key component of all optoelectronic systems induced during ten last years a particularly great research effort is devoted to this component. Corresponding works cover a broad field of study of the physical properties of materials up to the analysis of the whole of the mechanisms governing the device operation. The aim of the present work is to contribute by a comparison of lasers diode containing quaternary alloy for different wavelength for a structure hetero-junction and double hetero-junction. We chose for our study the following alloys: Ga0,65In0, 35As0,15Sb0,85, Ga0,60In0,40As0,02Sb0,98and Ga0,46In0,54As0,48Sb0,52. The characteristics on which we focused our study is the analysis of this structure and the comparison summarizes the maximum gain and the minimal density of current.