Electrodeposition of In2S3 buffer layer for Cu(In,Ga)Se2 solar cells

The electrochemical deposition of In2S3 thin films was carried out from an aqueous solution of InCl3 and Na2S2O3. The effect of the potential of deposition was studied on the cell parameters of CIGSe based solar cells. The obtained films depending on the deposition potential and thickness exhibited complete substrate coverage or nanocolumnar layers. XPS measurements detected the presence of indium sulphide and hydroxide depending on the deposition parameters. Maximum photoelectric conversion efficiency of 10.2% was obtained, limited mainly by a low fill factor (56%). Further process optimization is expected to lead to efficiencies comparable to CdS buffer layers.