Synthesis of SnS Thin Films from Nano-multilayer Technique

Tin sulfide (SnS) thin films were prepared by nano-multilayer method on glass substrate followed byrapid thermal processing at 300 °C for 5 minutes in Argon atmosphere. The films showed strong (040)crystal orientation for the films with stoichiometric ratio (Sn:S) of 1:1. The film had an optical energyband gap Eg=1.44 eV and a P-type conductivity with a resistivity of 500 Ω
• cm. The activation energy ofthe SnS was 0.035 eV. symposium organizers: G. Conibeer; Yongxiang Li; J. Poortmans; M. Kondo; A. Slaoui; M. Tao; M. Topic