Spectral Response of Metal-Semiconductor-Metal Photodetector Based on Black Silicon

This paper reports the spectral responsivity of black silicon photodetector in a spectral range from 400 nm to 700 nm. According to the results, the responsivity of the detector annealed at temperature of 673 K by Rapid Thermal Annealing (RTA), is 58.8 A/W at 670 nm, which is nearly two orders of magnitude greater than the one without annealing treatment. Moreover, bias voltage plays another important role that greatly affects the spectral response of the photodetector.