کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1514659 1511225 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In-depth analysis of transient errors of inline IV measurements
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
In-depth analysis of transient errors of inline IV measurements
چکیده انگلیسی

Silicon solar cells are prone to transient effects during fast acquisition of the illuminated IV parameters, as it is commonly carried out using industrial cell testers. It is known that the IV curve sweep time and direction have a significant impact on the measured fill factor and open circuit voltage. Within this contribution, the hysteresis effect on the fill factor and the open circuit voltage are investigated for different types of industrially fabricated silicon solar cells. This investigation is carried out on two different, commonly used, flash-based cell testers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 8, 2011, Pages 82-87