Characterization of heterojunctions based on airless spray deposited CuInS2 thin films on different underlayers

The SEM showed that the thickness of the SnO2, ZnO, In2S3 and CuInS2 are 0.529; 0.684; 0.267 and 0.507 μm respectively. The optical band gap of the CuInS2 absorber material is 1,51 eV. The electrical properties of these structures are analysed from current-voltage (I-V) characteristics.