کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
166061 1423414 2014 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogenation of Silicon Tetrachloride in Microwave Plasma
ترجمه فارسی عنوان
هیدروژن سازی سیلیکون تتراکلرید در پلاسمای مایکروویو
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
چکیده انگلیسی

This study investigated the hydrogenation of silicon tetrachloride (SiCl4) in microwave plasma. A new launcher of argon (Ar) and hydrogen (H2) plasma was introduced to produce a non-thermodynamic equilibrium activation plasma. The plasma state exhibited a characteristic temperature related to the equilibrium constant, which was termed “Reactive Temperature” in this study. Thus, the hydrogenation of SiCl4 in the plasma could easily be handled with high conversion ratio and very high selectivity to trichlorosilane (SiHCl3). The effects of SiCl4/Ar and H2/Ar ratios on the conversion were also investigated using a mathematical model developed to determine the optimum experimental parameters. The highest hydrogenation conversion ratio was produced at a H2/SiCl4 molar ratio of 1, with mixtures of SiCl4 and H2 to Ar molar ratio of 1.2 to 1.4. In this plasma, the special system pressure and incident power were required for the highest energy efficiency of hydrogenating SiCl4, while the optimum system pressure varies from 26.6 to 40 kPa depending on input power, and the optimum feed gas (H2 and SiCl4) molar energy input was about 350 kJ·mol−1.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chinese Journal of Chemical Engineering - Volume 22, Issue 2, February 2014, Pages 227-233