Investigation of chipping and wear of silicon wafer dicing

Wafer dicing chipping and blade wear processes in transient and steady stages were investigated. Dicing blades with two different diamond grit sizes were used to cut wafers. In the cutting experiments, the dicing blades with two different diamond grit sizes were used to cut wafers and for a given type of wafer, the cooling water temperature, cutting feed speed, and rotational speed were fixed. The chipping size, blade surface wear area and surface roughness of the wafer were measured at cutting distances of 50, 150, 300, 975, 1350, and 1900 m, respectively. Cutting debris of cutting distances of 300 m and 1900 m was collected and analyzed. The correlation between blade surface properties and chipping size was investigated. Based on this experimental system, attention is to pay to examine the correlation between blade surface properties and chipping size for transient stage and steady stage. In transient stage, the roughness of dicing blade increases rapidly. This will rapidly increase the chipping size. In steady stage, the chipping size decreases slowly with the decreasing roughness of blade surface. This concludes that blade surface condition is an important factor that affects the chipping size. Moreover, in transient stage, diamond grits that are salient or less bonded to the blade detach leave caves on the blade surface which increases surface roughness of the blade and the chipping size. In steady stage, the heights of grits become even and the chipping size decreases accordingly.