کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1758987 1019258 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO2/Si(1 0 0)
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم آکوستیک و فرا صوت
پیش نمایش صفحه اول مقاله
FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO2/Si(1 0 0)
چکیده انگلیسی


• 2D COMSOL simulations for CMOS compatible SAW filter were done.
• We simulated a piezoelectric thin film system consisting of AlN/SiO2/Si(1 0 0).
• Several parameters were calculated like dispersion curves, coupling factor, reflectivity.
• We could identified the particle displacement for the first two Rayleigh modes.
• Al-electrodes showing high coupling factors and lowest acoustic reflectivity.

A simulation study of Rayleigh wave devices based on a stacked AlN/SiO2/Si(1 0 0) device was carried out. Dispersion curves with respect to acoustic phase velocity, reflectivity and electromechanical coupling efficiency for tungsten W and aluminium Al electrodes and different layer thicknesses were quantified by 2D FEM COMSOL simulations. Simulated acoustic mode shapes are presented. The impact of these parameters on the observed Rayleigh wave modes was discussed. High coupling factors of 2% and high velocities up to 5000 m/s were obtained by optimizing the AlN/SiO2 thickness ratio.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultrasonics - Volume 54, Issue 1, January 2014, Pages 291–295
نویسندگان
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