کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1784060 | 1524114 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays](/preview/png/1784060.png)
چکیده انگلیسی
In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 Ã 256 LWIR FPA has been fabricated with low surface leakage and high R0A product of FPA pixels by using anodic sulfide and SiO2 physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R0A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R0A is 224 Ω cm2 with the average detectivity of 2.3 Ã 1010 cm Hz1/2 Wâ1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 72, September 2015, Pages 276-280
Journal: Infrared Physics & Technology - Volume 72, September 2015, Pages 276-280
نویسندگان
Hao Hongyue, Wang Guowei, Xiang Wei, Han Xi, Xu Yingqiang, Liao Yongping, Zhang Yu, Ren Zhengwei, Ni Haiqiao, He Zhenhong, Niu Zhichuan,