Dual color longwave InAs/GaSb type-II strained layer superlattice detectors

We report on the design, growth, fabrication and characterization of dual-band (long-/long-wave infrared) type-II InAs/GaSb strained layer superlattice (T2SL) detectors with pBp architecture. Under operating the bias of −200 mV and +100 mV, quantum efficiencies of 37% (∼11 μm band) and 25% (∼9 μm band) were realized, respectively. To reduce the dark current in a dual-band T2SL detector, the effect of a “restoration” chemical etch treatment and ZnTe passivation on device performance were investigated.