Measurements of the optical absorption coefficient of Ar8+ ion implanted silicon layers using the photothermal radiometry and the modulated free carrier absorption methods

• The optical absorption of Ar8+ implanted layers in p-type silicon is presented.
• Optical absorption indicates the amorphization of the implanted layer.
• Decrease of the lifetime of carriers in argon implanted layers is observed.

This paper presents a method of the measurement of the optical absorption coefficient of the Ar8+ ions implanted layers in the p-type silicon substrate. The absorption coefficient is calculated using a value of the attenuation of amplitudes of a photothermal radiometry (PTR) and/or a modulation free carrier absorption (MFCA) signals and the implanted layer thickness calculated by means of the TRIM program. The proposed method can be used to indicate the amorphization of the ions implanted layers.