Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy

• We fabricated a heavily Bi-doped (xBi ≈ 2 × 1019 cm−3) PbTe p–n homojunction diode.
• Photocurrent density far exceeds that of undoped and heavily In-doped sample.
• Shortened peak shift of detectable wavelength coincides with our previous study.
• Estimated deep level energy is 0.067 eV, again consistent with our previous study.

We fabricated a heavily Bi-doped (xBi ≈ 2 × 1019 cm−3) PbTe p–n homojunction diode that detects mid-infrared wavelengths by the temperature difference method (TDM) under controlled vapor pressure (CVP) liquid phase epitaxy (LPE). The photocurrent density produced by the heavily Bi-doped diode sample is approximately 20 times and 3 times greater than that produced by an undoped and heavily In-doped sample, respectively. By varying the ambient temperature from 15 K to 225 K, the detectable wavelength is tunable from 6.18 μm to 4.20 μm. The peak shift of the detectable wavelength is shorter in the heavily Bi-doped sample than in the undoped sample, consistent with our previously proposed model, in which Bi–Bi nearest donor–acceptor pairs are formed in the heavily Bi-doped PbTe liquid phase epitaxial layer. Current–voltage (I–V) measurements of the heavily Bi-doped diode sample under infrared exposure at 77 K indicated a likely leak in the dark current, arising from the deeper levels. From the dark I–V measurements, the activation energy of the deep level was estimated as 0.067 eV, close to the energy of the deep Tl-doped PbTe acceptor layer. We conclude that the deep level originates from the Tl-doped p-type epitaxial layer.