A 288 × 4 linear-array photodetector based on Hg vacancy-doped HgCdTe with long-wave cutoff wavelength greater than 12 μm

• 288 × 4 linear-array IR detectors based on vacancy-doped HgCdTe with λco ≈ 12.5–13 μm were fabricated and optimized.
• The measured dependence λco(T) is close to the predicted one.
• Above 67 K, the dark current depends on temperature as ∼ni2, and it varies as ∼ni below 67 K.
• The specific detectivity at 65 K of fabricated IR detectors was found to be as high as 4 × 1011 cm Hz1/2 W−1.

A 288 × 4 linear-array photodetector based on vacancy-doped HgCdTe with cutoff wavelengths 12.5–13.0 μm and specific detectivity as high as 4 × 1011 cm Hz1/2 W−1 operated at 65 K is reported.