کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1784302 1524117 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Periodically structured Si pillars for high-performing heterojunction photodetectors
ترجمه فارسی عنوان
ستون های ستون سازگار به صورت دوره ای برای دستگاه های فوتوودشن که دارای عملکرد بالا می باشند
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
چکیده انگلیسی


• Uniform array of Si pillar patterns is fabricated by etching method.
• ITO layer creates a stable and quality rectifying junction with n-Si pillars.
• Least optical reflection and low IRS value are the main benefits of this method.
• Charge carriers are effectively collected and separated in the SCR space.
• Pillar structured Si device exhibits better photoresponsive nature.

A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 69, March 2015, Pages 174–178
نویسندگان
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