کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1784308 | 1524117 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates](/preview/png/1784308.png)
چکیده انگلیسی
The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid-infrared (IR) applications. Lattice matching these alloys to convenient substrates such as GaSb, however, is challenging due to the significantly different lattice constants. One approach is to use InGaSbN/InAs grown on GaSb where the InGaSbN layer has a larger lattice constant than the substrate, and the InAs layer has a lower lattice constant, and thus the compressive and tensile stress of the superlattice layers can be balanced in a so called strained-layer superlattice. In this paper, we report InxGa1âxSb1âyNy/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, where the design of the layer thickness is based on the lattice constants and the elastic moduli. Three different strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1âxSb1âyNy barrier thickness. Eight-band k · p simulations of these structures were used to analyze the superlattice miniband energies. For fully strain balanced InxGa1âxSb1âyNy/InAs superlattices lattice matched to the GaSb substrate, careful consideration of strain balance conditions was needed to achieve a lower effective miniband gap needed for longer cutoff wavelength detectors. For non-strained balanced InxGa1âxSb1âyNy/InAs superlattices, long-wavelength cutoff up to 8 μm can be achieved as part of a trade-off between the deleterious effects of strain and the reduction of the barrier band gap through N incorporation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 69, March 2015, Pages 211-217
Journal: Infrared Physics & Technology - Volume 69, March 2015, Pages 211-217
نویسندگان
Ramsey Hazbun, Nupur Bhargava, Victor A. Rodriguez-Toro, Keith Goossen, James Kolodzey, L. Ramdas Ram-Mohan, Leye Aina, Ayub Fathimulla, Harry Hier,