Concentration and temperature dependence of the energy gap in some binary and alloy semiconductors

• Four new models, one each for the calculation of the Eg(x), Eg(T), Eg(x, T) and Eg(x, y), have been proposed.
• Our calculated values are more close to the experimental values than the models proposed by earlier workers.
• Curves have also been plotted for energy gap variation with respect to all four parameters, i.e., x, T, (x, T) and (x, y).
• The average % deviation of all proposed relations has been estimated and found to be better than the earlier correlations.

Concentration dependence of the energy gap Eg(x) of In1−xGaxAs, InP1−xAsx, GaxAl1−xAs, GaPxAs1−x and AgGaxIn1−xSe2 alloy semiconductors, and temperature dependence of the energy gap Eg(T) of GaS, GaSe, GaTe, SnS and SnSe2 binary semiconductors have been studied. Both the concentration and temperature dependence of the energy gap Eg(x, T) of AlxGa1−xN ternary alloy, and concentrations dependence of the energy gap Eg(x, y) of In1−xGaxAs1−yPy quaternary alloy semiconductor have also been investigated. Simple relations have been proposed for the calculation of Eg(x), Eg(T), Eg(x, T) and Eg(x, y) for various binary and alloys semiconductors. The average percentage deviation of all proposed relations has been estimated and found to be better than the earlier correlations. The calculated values are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been obtained between them.