Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates

• (1 1 0) -oriented VO2 thin films were obtained on FTO substrate by DC magnetron sputtering.
• VO2 thin films have a low phase transition temperature (∼51 °C).
• The NIR modulation efficiency is markedly affected (transmittance, ∼40%).
• The properties were studied upon XRD and SEM.

By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2 h at the temperature of 410 °C in air ambient. (1 1 0) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of ∼40% happened at 900–1250 nm region at room temperature. The change of optical transmittance at this region was ∼25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor–metal phase transition at ∼51 °C, the width of the hysteresis loop is ∼8 °C.