Design and modelling of high-operating temperature MWIR HgCdTe nBn detector with n- and p-type barriers

Theoretical results were related to the experimental data of the MWIR n+/B/n/N+ photodetectors grown by MOCVD. Dark currents of the first fabricated devices are limited by undesirable iodine diffusion from cap layer to the barrier. However, the nBn architecture might be a promising solution for HgCdTe infrared detectors grown by MOCVD, mainly due to the possibility of in situ acceptor doping of the barrier.