Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6–3.5 μm

The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results shows that, the low temperature region the tunneling mechanism of the current flow dominates in both, forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by diffusion mechanism.

► In this study presented the results of dark current analysis InAs based photodiodes were studied in several temperatures.
► The results shows that, at low temperatures the tunneling mechanism dominates in forward and reverse biases.
► We presented the dependence of the photocurrent on a reverse bias under illumination by monochromatic light of λ = 1.0 μm and 2.0 μm.