Electrical characteristic signatures for non-uniformity analysis in HgCdTe photodiode arrays

In this paper we present a method of analyzing the performance non-uniformity of HgCdTe photodiode arrays for infrared imaging applications. For quantifying the characteristic behavior of various photodiodes, we have parametrized the dynamic resistance verses voltage signatures in such a way that the obtained signature parameters have some relevance with different physical parameters. We also estimated the sensitivity of the proposed signatures on physical parameters using statistical technique. These characteristics signatures may be used to quantify the non-uniformity of the HgCdTe photodiodes in IR imaging arrays and its analysis. The method presented here is based on theoretical calculation of MWIR HgCdTe photodiodes. However, the method is generic and may be implemented on any other type of diode arrays for theoretical or experimental analysis of their non-uniformity.

► Presented a theoretical approach of modeling non-uniformity in HgCdTe Photo-diode arrays.
► Identification of characteristic signatures in dynamic resistance–voltage curves.
► Correlation and sensitivity analysis of the signature parameters with the input/design physical parameters.
► Analysis of 2D distribution of signature parameters in response to the parameter variations.
► Statistical approach to identify the root cause of the non-uniformity in the arrays.