InAs/GaSb superlattices grown by LP-MOCVD for ∼10 μm wavelength infrared range

► We grow type II InAs/GaSb superlattices for long wavelength infrared detectors use LP-MOCVD. ► The quality of the InAs/GaSb superlattices is systematically improved by using optimization growth conditions. ► The PL peak wavelength of the sample is 10.7 μm at 77 K with FWHM of 30 meV.