InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy

InSb has been grown by liquid phase epitaxy using indium rich solutions with a supercooling of 2–5 °C onto (1 1 1) oriented Cd0.955Zn0.045Te substrates at 400–405 °C. The resulting epitaxial layers were extensively characterized using X-ray diffraction, optical microscopy, Raman spectroscopy and photoluminescence.

► InSb has been grown by liquid phase epitaxy onto (1 1 1) oriented Cd0.955Zn0.045Te substrates.
► The epilayers were smooth and lattice matched to the Cd0.955Zn0.045Te substrate.
► The resulting epilayers were characterized by XRD, optical microscopy, Raman spectroscopy and photoluminescence.
► Raman and FTIR spectroscopy confirmed that InSb epilayers can be grown on CdTe or Cd0.955Zn0.045Te substrates by LPE.