Performance of InAs/GaSb superlattice infrared detectors and dependence on minority carrier lifetime

This paper will discuss the desired quantum efficiency and dark current density of type-II strained-layer superlattice detectors (T2SLS), and required read-noise levels for long-wavelength infrared (LWIR) imaging applications at various background levels. The computation begins with noise equivalent irradiance NEI requirements with the focal plane array (FPA) operating at near-background limited infrared photodetection (BLIP) performance conditions. The paper will theoretically analyze the quantum efficiency and the dark current based on various components such as: diffusion, generation–recombination and tunneling, and dependence on the minority carrier lifetime of T2SL detector material. These calculations show appropriate minority carrier lifetime of the detector material for the various flux levels discussed in the article.

Research highlights
► We model quantum efficiency and dark current of type-II strained-layer superlattice detectors.
► Increasing doping density and minority carrier lifetime will reduce the diffusion current.
► Inclusion of heterojunction will reduce generation-recombination current.