Improvement in performance of high-operating temperature HgCdTe photodiodes

Finally, it is shown that the response time of HgCdTe photodiodes at weak reverse bias condition is mainly limited by the drift time of carriers moving into p-N+ junction. Using the reverse bias higher than 50 mV, the transit time across the absorber region limits the response time. The response time of small-area devices decreases in the region of weak reverse bias achieving value below 1 ns.