کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1784794 1023278 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Experimental evidence for the third level (А+) of Hg vacancy in Hg1−xCdxTe
چکیده انگلیسی

Mercury vacancy in Hg1-xCdxTe is not a two-level (as it was supposed until now), but a three-level acceptor. A third, most shallow (1–1.5 meV) level (А+ state) appears due to a capture of a third hole by a neutral acceptor, after the two deeper vacancy levels (A− and А0 states) are already occupied by holes. Due to a capture of nonequilibrium holes by neutral mercury vacancies (under radiation) a positive space charge region arises near an irradiated surface. This causes the anomalies of photoelectromagnetic effect, observed in р-Hg1−xCdxTe at T < 10–12 K.


► Mercury vacancy in Hg1−xCdxTe is not a two-level, but a three-level acceptor.
► A third level (А+ state) appears due to a capture of hole by neutral vacancy.
► A positive space charge region (SCR) arises under radiation.
► This SCR causes the anomalies of photoelectromagnetic effect (PME) at T < 12 K.
► Studies of PME are an effective method for localized levels structure characterization.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 55, Issue 6, November 2012, Pages 481–484
نویسندگان
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