InAs/GaInSb superlattices as a promising material system for third generation infrared detectors

A superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive alternative to HgCdTe with good spatial uniformity and an ability to span cut-off wavelength from 3 to 25 μm. The recently published results have indicated that high performance middle wavelength infrared (MWIR) InAs/GaInSb superlattice focal plane arrays can be fabricated. Also LWIR photodiodes with the R0A values exceeding 100 Ωcm2 even with a cut-off wavelength of 14 μm can be achieved. Based on these very promising results it is obvious now that the antimonide superlattice technology is competing with HgCdTe dual colour technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing.