Quantum transport in quantum well infrared photodetectors in the tunneling regime

Quantum well infrared photodetectors (QWIP) are good candidates for low photon flux detection in the 12–20 μm range. For particularly low incident power applications, it can be interesting to reduce the operating temperature to reach the ultimate performance of the QWIP (low dark current, low noise, high detectivity). Nevertheless, once the QWIP operates in the tunneling regime, the dark current is no longer improved by reducing the temperature. Thus, further improvement of the performance needs a microscopic understanding of the physical phenomena involved in QWIP operation in the tunneling regime. In this paper we focus on the dark current of QWIP operated at very low temperature (4–20 K). Experimental results obtained on a 14.5 μm peaking device revealed a plateau regime in the IV curves. We first modeled the dark current using the WKB approximation, but it failed to reproduce the shape and order of magnitude of the phenomenon. As an improvement, we developed a scattering formalism. Our model includes all the most common interactions observed in GaAs: optical phonon, acoustical phonon, alloy disorder, interface roughness, interaction with ionized impurities and between carriers. We demonstrate that, as far as the tunneling regime is concerned, the dominant interaction is the one between electron and ionized impurities, which allows us to conclude on the influence of the doping profile on the dark current.