کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785060 1023293 2006 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature fabrication of vanadium oxide films for uncooled bolometric detectors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Low temperature fabrication of vanadium oxide films for uncooled bolometric detectors
چکیده انگلیسی

Vanadium oxide films with temperature coefficient of resistant of −2.6% K−1 have been fabricated on Si3N4-film-coated Si substrates by ion beam sputtering in a controlled Ar/O2 atmosphere, at a relatively low growth temperature of 200 °C. The as-deposited films show no semiconductor-to-metal phase transitions even heated up to 150 °C. X-ray diffractometry shows that the main compound of the VOx film is a metastable phase of vanadium dioxide (VO2(B)) and the VO2(B) film can be transformed into VO2 film by post-growth annealing at 450 °C in flowing Ar atmosphere.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 47, Issue 3, January 2006, Pages 273–277
نویسندگان
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