Structure design of amorphous silicon thin film transistor used as uncooled infrared sensors

The influence of gate dimensions on the detectivity of uncooled amorphous silicon thin film transistor infrared sensors is analyzed theoretically. The relationship between the structure parameter of thin film transistor and electronic as well as thermal responsivity is simulated by finite element analysis software. Optimized structure has been carried out through theoretical analysis and ANSYS 8.0 simulation.