کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785137 1023298 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method
چکیده انگلیسی

Vanadium oxide films have been fabricated on Si3N4-film-coated silicon substrates by direct current reactive magnetron sputtering method. Conditions of deposition are optimized making use of parameters such as sputtering time, dc power, oxygen partial pressure and substrate temperature. X-ray diffraction indicates that the film is a mixture of VO2, V2O3, and V3O5. Four-probe measurement shows that the VOx thin film owns high temperature coefficient of resistance (TCR ∼−2.05%/°C) and suitable square resistance 18.40 kΩ/□ (measured at 25 °C), indicating it is a well candidate material for uncooled IR detectors. In addition, IR absorption in the wavelength of 2–16 μm has been characterized. It is worth noting that the films are sputtered at a relatively low temperature of 210 °C in a controlled Ar/O2 atmosphere. Compared to traditional craft, this method needs no post-anneal at high temperature (400–500 °C).

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 51, Issue 4, March 2008, Pages 287–291
نویسندگان
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