کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1785163 | 1023302 | 2008 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Effect of Nb doping on pyroelectric property of lead zirconate titanate films prepared by chemical solution deposition Effect of Nb doping on pyroelectric property of lead zirconate titanate films prepared by chemical solution deposition](/preview/png/1785163.png)
Pb(Zr0.2Ti0.8)1−xNbxO3 (PNZT) (x = 0%, 1%, 2%, 3%, 4%) films with 1 μm thickness were deposited on a platinized silicon using the chemical solution deposition (CSD) method followed by rapid thermal annealing (RTA). X-ray patterns indicate that introduction of the first seeding layer significantly enhance the crystallization of films after RTA processing. Electrical characterization was performed on Pt/PNZT/Pt capacitors. In order to precisely determine the pyroelectric coefficients of the PNZT films, trapezium and sinusoidal temperature modulations were applied to Pt/PNZT/Pt capacitors while measuring the pyroelectric current signal. Pyroelectric voltage response of these films was measured with chopped IR radiation from a blackbody source tuned to equivalent of 400 °C. Results show that doping PZT with Nb significantly improves the ferroelectric and pyroelectric properties of these films. Films with doping level of 1 mol% of Nb exhibit the highest values of remnant polarization (49.33 μC/cm2) and pyroelectric coefficient (4.6 × 10−4 C/K m2).
Journal: Infrared Physics & Technology - Volume 51, Issue 3, January 2008, Pages 216–220