کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1785171 | 1023302 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Unified carrier density approximation for non-parabolic and highly degenerate HgCdTe semiconductors covering SWIR, MWIR and LWIR bands
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Unified carrier density approximation for non-parabolic and highly degenerate HgCdTe semiconductors covering SWIR, MWIR and LWIR bands Unified carrier density approximation for non-parabolic and highly degenerate HgCdTe semiconductors covering SWIR, MWIR and LWIR bands](/preview/png/1785171.png)
چکیده انگلیسی
We propose a unified approximate analytical expression for the carrier density of HgCdTe semiconductors that have non-parabolic energy bands and are highly degenerate. The proposed expression is without any adjustable parameter. It can be applied to HgCdTe for the case where electron densities are very high and the material is strongly degenerate, e.g., a highly accumulated surface due to passivant-induced negative fixed charge density in an n-HgCdTe photoconductor device. The proposed expression is simultaneously valid for SWIR, MWIR and LWIR bands.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 51, Issue 3, January 2008, Pages 259–262
Journal: Infrared Physics & Technology - Volume 51, Issue 3, January 2008, Pages 259–262
نویسندگان
Sudha Gupta, R.K. Bhan, V. Dhar,